Copertina di Triple Metal Double Gate (TM-DG) MOSFET
Titolo del libro:

Triple Metal Double Gate (TM-DG) MOSFET

Simulation and Analysis of Lightly-Doped Ultra-Thin TM-DG MOSFETs with High-K Dielectric for Diminished SCEs

LAP LAMBERT Academic Publishing (06.08.2012 )

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ISBN-13:

978-3-659-14951-1

ISBN-10:
3659149519
EAN:
9783659149511
Lingua del libro:
Inglese
Risvolto di copertina:
The aggressive scaling of the CMOS technology in the deep submicrometer regime gives rise to the short channel effects(SCEs). The double gate or multi-gate devices provide a better scalability option due to its excellent immunity to short-channel effects. This work focuses on the performance analysis of ultra-thin body Triple Metal Double Gate(TM-DG) MOSFET implemented with the high-k dielectric in gate oxide. The TMDG MOSFETs and its electrical characteristics variation especially short channel effects(SCEs) have been simulated and analyzed. optimal doping in the channel region can provide a better device performance in terms of drive current, ION/IOFF ratio, etc., keeping the SCEs within reasonable limits. The above device has been optimized with TCAD (Sentaurus TCAD)simulations and it has been found that the TMDG MOSFETs offers better transconductance, subthreshold swing, ION/IOFF ratio in sub 100 nm regimes as compared to the conventional DG MOSFETs.
Casa editrice:
LAP LAMBERT Academic Publishing
Sito Web:
https://www.lap-publishing.com/
Da (autore):
Achinta Baidya
Numero di pagine:
76
Pubblicato il:
06.08.2012
Giacenza di magazzino:
Disponibile
categoria:
Elettronica, Elettrotecnica, tecnologia dell'informazione e della comunicazione
Prezzo:
49,00 €
Parole chiave:
double gate MOSFET, Gate Engineering

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