Buchcover von Nitride Semiconductor Doped with Transition Metal
Buchtitel:

Nitride Semiconductor Doped with Transition Metal

LAP LAMBERT Academic Publishing (31.07.2018 )

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ISBN-13:

978-3-659-51118-9

ISBN-10:
3659511188
EAN:
9783659511189
Buchsprache:
Englisch
Klappentext:
In this work, we present a theoretical study of structural, electronic, magnetic and optical properties for zinc-blende :Ga1−xT MxN,Al1−xT MxN and In1−xT MxN(TM=Cr, Fe, Mn, V) using the full-potential augmented plane wave (FP-APW) method with local spin density approximation (LSDA). We have analysed the dependence of structural parameters values on the composition x in the range of x=0.125,x=0.25, x=0.50,x=0.75, we found existence of deviation from Vegard’s law. Our calculations also verify the half-metallic ferromagnetic character of TM doped GaN, AlN and InN. Also, the role of p-d hybridization is analyzed by partial (PDOS) and total density of stat (TDOS).
Verlag:
LAP LAMBERT Academic Publishing
Webseite:
https://www.lap-publishing.com/
von (Autor):
Fethallah Dahmane, Abdelkader Tadjer, Bendouma Doumi
Seitenanzahl:
156
Veröffentlicht am:
31.07.2018
Lagerbestand:
Lieferbar
Kategorie:
Elektrizität, Magnetismus, Optik
Preis:
61,90 €
Stichworte:
Transition Metals, Magnetic moment, First principal calculation, nitride semiconductor

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