Buchcover von Modeling of Nanoscale Double-Gate and Gate-All-Around MOSFETs
Buchtitel:

Modeling of Nanoscale Double-Gate and Gate-All-Around MOSFETs

GlobeEdit (28.09.2014 )

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ISBN-13:

978-3-639-72732-6

ISBN-10:
3639727320
EAN:
9783639727326
Buchsprache:
Englisch
Klappentext:
A precise modeling framework for short-channel nanoscale double gate (DG) and gate-all-around (GAA) MOSFETs is presented. In the subthreshold regime, the modeling of the electrostatics of the DG MOSFET is based on a conformal mapping analysis. This analytical 2D solution of Laplace’s equation gives the inter-electrode capacitive coupling. The GAA MOSFET is a 3D structure to which the 2D conformal mapping technique is not directly applicable. However, due to the structural similarities, the DG calculations can also be applied with a high degree of precision to the cylindrical GAA MOSFET by performing a simple geometric scaling transformation. Near and above threshold, self-consistent procedures invoking the the 2D/3D Poisson’s equation in combination with boundary conditions and suitable modeling expressions are used to model the electrostatics of the two devices. The drain current is calculated as part of the self-consistent treatment, and based on the precise modeling of the 2D/3D electrostatics the intrinsic capacitances can also be extracted.
Verlag:
GlobeEdit
Webseite:
https://www.globeedit.com
von (Autor):
Håkon Børli
Seitenanzahl:
156
Veröffentlicht am:
28.09.2014
Lagerbestand:
Lieferbar
Kategorie:
Elektronik, Elektrotechnik, Nachrichtentechnik
Preis:
55,90 €
Stichworte:
double gate devices, gate-all-around devices, nanoscale MOSFETs., conformal mapping, device modeling

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